Annotation
A difference has been found in the kinetics of photoconductivity variation during illumination for undoped a-Si:H films preliminarily annealed or illuminated at elevated temperatures. Several mechanisms have been suggested for photoinduced formation of dangling bonds in the films after their pretreatment under different conditions.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
I.P. Zvyagin, I.A. Kurova, N.V. Meleshko, N.N. Orrnont
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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