Toward a theory on the condensed phase of nonequilibrium carriers in semiconductors (I)

The properties of an electron-hole plasma in an intrinsic semiconductor are considered at high nonequilibrium-carrier (electron and hole) concentrations. A variational method is used to determine the single-particle spectrum of the sys­ tem with allowance for the interaction. An expression is derived for the free energy of the system within the framework of the approach used, as well as expressions for the free energy per pair of condensate particles.