Concerning the spectrum of 1/τ slow traps on semiconductor surfaces

It is shown that when allowance is made for the fact that the vertical or thickness - wise distribution of barriers separating the slow states from the semiconductor volume is normal (Gaussian) it is possible to obtain their distribution as a function of the relaxation time g(τ), which can be approximated, over a quite wide range of τ, by the relationship g(τ)~τ^(-α), where α≅1.