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On the problem of interband optical absorption in disordered semiconductors

V.L. Воnсh-Bruеviсh, V.D. Iskrа

Moscow University Physics Bulletin 1979. 34. N 3. P. 16

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Annotation

We calculate the absorption coefficient of light in a disordered semiconductor for photon energies smaller than the width of the forbidden band. The interaction of the electrons both with the random field which produces the spectrum of fluctuational levels and with phonons(the multiphonon radiator transitions) is considered.

Authors
V.L. Воnсh-Bruеviсh, V.D. Iskrа
Московский государственный университет имени М.В. Ломоносова, физический факультет, кафедра физики полупроводников. Россия, 119991, Москва, Ленинские горы, д. 1, стр. 2
Issue 3, 1979

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