Annotation
A kinetic equation is obtained for the high-frequency components of the filling function of local states in disordered semiconductors. The equation obtained is used to estimate the nonlinear susceptibility due to migrations between localization centers randomly situated in space.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
I.P. Zvyagin
Кафедра физики полупроводников
Кафедра физики полупроводников
Science News of the Faculty of Physics, Lomonosov Moscow State University
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