On the role of vibrational excitations of а molecular system in the slow relaxation kinetic of charge on а semiconductor surfасе

It is shown that the activation energy of the slow relaxation of charge in the field effect depends on the energy of the vibrational modes of absorbed molecules. The reason for the small capture cross sections of the slow electronic states is discussed. A capture model is proposed which explains the temperature dependence of the slow-relaxation kinetics in various gaseous units.