Direct measurements have been made of the differential heats of adsorption of oxygen on atomically clean surfaces of germanium, silicon, and lead sulfide; which have been produced by crushing the initial single crystals under ultrahigh vacuum. The high heats of adsorption for Ge and Si (115 ± 10 and 210 ± 30 kcal/mol, respectively) are associated with the formation of double bonds. The interaction of an atomically clean surface of Ge with oxygen is dependent on the presence of minute traces of water. No such relationship is observed for silicon.
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