Investigation of radiation defects distribution in NaCl by transmission electron microscopy

Data are presented on the study of the transverse slippage of argon ion- irradiated NaCI crystal (E-3 keV, current density 100 μA/$cm^{2}$, irradiated plane (100), slippage along (010) at a temperature of l80°C. Regions of defect localization in the slip plane are found by means of vacuum decoration radiation erosion of the profile of the near-surface layer of the crystal at different angles (40-90°) and different radiation doses ($10^{17}$-$10^{19}$ ion/$cm^{2}$). Based on the obtained data, it is concluded that the dimensions of the radiation - damaged regions found by means of the decoration method and the nature of the erosion of the ionirradiated near-surface layer are attributable to diffusion of radiation defects.