We present a system of equations which relate the characteristics of an element of the rectenna, in particular, the efficiency, with the parameters of the Schottky diode. These equations are intended for the determination of the proper ohmic losses in the element of the rectenna. We develop a method for the minimization of proper losses for various levels of the input microwave power. We calculate the losses in Au-GaAs diode. The calculations show that this type of diode can ensure higher than 90% conversion efficiency in a wide range of the input power (from 0.1 to 5W).
Department of Microwave Frequency Radiophysics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119991, Russia
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