We study the kinetics of slow relaxation of the charge on silicon surface in water-vapor atmosphere in a wide time range ($10^{- 2}\le t \le 10^5$ sec). It is shown that the experimental data agree fully with the ideas of the electronic-vibrational model for the charge exchange of the slow states. The form of kinetic curves corresponds to the Gaussian distribution over the energies of the O-H vibrational modes of the adsorbed complexes, which include rigidly adsorbed water molecules.
Department of General Physics for the Chemistry Faculty, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119991, Russia
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