Nonlinear resonance in a circuit with metal-dielectric-semiconductor structure illuminated by light

We calculate theoretically the resonance curves of a circuit with metal-dielectric-semiconductor structure illuminated from the dielectric side by continuous gas laser. The change of average capacitance of the structure in the region of inversion is due to the difference between the equilibrium and pulsed voltage-capacitance characteristics. We present experimental results in the region 1-2 MHz.