Annotation
A method of determining the nitrogen concentration in epitaxial layers of gallium phosphide is described; the method is based on measuring the ratio of photoluminescent intensity of the lines A and A-LO and the radiative time of the A line at T=80 K.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
N.R. Nurtdinov, E.Yu. Barinova
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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