The paper discusses the scope for using the even photomagnetic effect PME in examining the properties of semiconductor materials in cases where one usually employs the photo-Hall PH effect. One of the components of the even PME involves the same mechanism as the PH, and therefore similar information is provided by the even PME and PH regarding the properties of the semiconductor material. This is confirmed by measurements on the even PME and PH, and also on the odd PME in the same geometry for p-type Ge and Si.
Department of General Physics for the Physics Faculty, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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