Faculty of Physics
M.V.Lomonosov Moscow State University
Brief Report

The relation between the even photomagnetic effect and the photo-Hall effect

V.I. Nikolaev, G.N. Sever, T.V. Shilova

Moscow University Physics Bulletin 1984. 39. N 6. P. 93

  • Article

The paper discusses the scope for using the even photomagnetic effect PME in examining the properties of semiconductor materials in cases where one usually employs the photo-Hall PH effect. One of the components of the even PME involves the same mechanism as the PH, and therefore similar information is provided by the even PME and PH regarding the properties of the semiconductor material. This is confirmed by measurements on the even PME and PH, and also on the odd PME in the same geometry for p-type Ge and Si.

Rissian citation:
В.И. Николаев, Г.Н. Север, Т.В. Шилова.
О связи четного фотомагнитного эффекта с фото-холл-эффектом.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 1984. № 6. С. 81.
V.I. Nikolaev, G.N. Sever, T.V. Shilova
Department of General Physics for the Physics Faculty, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 6, 1984

Moscow University Physics Bulletin

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