Effects of molecular oxide films on the luminescence of adsorbed erythrosine molecules in a semiconductor-insulator system

Measurements have been made on the luminescence of adsorbed erythrosine on the surfaces of $Ge-GeO_2$ and $Ge-GeO_2$-transition-metal oxide structures, as well as charge transfers in electron and hole surface traps on illumination in the dye absorption band. It has been found that the trap photodepletion in such systems is due to excitation-energy transfer from the adsorbed molecules; there is a correlation between the structure of the surface oxide layers and the performance in that process.