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Charge accumulation in a semiconductor in a variable transverse field

V.F. Kiselev, V.A. Matveev

Moscow University Physics Bulletin 1985. 40. N 3. P. 97

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Annotation

We study the accumulation of positive charge when germanium surface is acted upon by transverse sinusoidal fields. It is shown that the accumulation effect takes place only in the presence of adsorbed water molecules on the surface, and is not observed in the atmosphere of other donor molecules. We develop a donor mechanism for the accumulation effect. We note that the dissociation constant of the adsorbed water molecules depends on the sign of the charge captured into the slow adsorption states.

Authors
V.F. Kiselev, V.A. Matveev
Department of General Physics for the Chemistry Faculty, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 3, 1985

Moscow University Physics Bulletin

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