$Cd_xHg_{1-x}Te$ narrow-gap semiconductors in strong electric and magnetic fields

$Cd_xHg_{1-x}Te$ alloys with $x$ of 0.18-0.25 have been used in examining the voltage-current characteristics in fields up to 60 kOe at 4.2 K, while galvanomagnetic measurements have been made at 0.2-300 K. It is concluded that there is a nonmonotone dependence of the Hall coefficient on field at breakdown in materials with mixed conductivity, while the prebreakdown superlinear part of the voltage-current characteristic in a strong magnetic field is related to activation of electrons localized in potential wells.