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Effects of charged defects in a system formed by a semiconductor with a molecular-film insulator on the fluorescence spectra of adsorbed molecules

V.A. Bespalov, V.E. Drozd, L.V. Levshin, G.S. Plotnikov, A.M. Saletskii, V.I. Yuzhakov

Moscow University Physics Bulletin 1986. 41. N 2. P. 57

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Annotation

A study has been made on the effects of charged local defects on the fluorescence spectra of erythrosine adsorbed on structures of semiconductor with molecularly deposited insulators ($HfO_2, TiO_2, Nb_2O_5 , V_2O_5 , Cr_2O_3$). Spectrum-shift effects have been observed in the fields of charged centers with differing signs and natures.

Authors
V.A. Bespalov, V.E. Drozd, L.V. Levshin, G.S. Plotnikov, A.M. Saletskii, V.I. Yuzhakov
Department of General Physics for the Chemistry Faculty, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 2, 1986

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