The effect of compensational disorder on the mobility and Hall factors in high resistance silicon

The galvanomagnetic properties of undoped n- and p-type silicon with shadow specific resistances of $\rho=1-100$ k$\Omega\cdot$cm are investigated. The dependences of the Hall constant $R$ and the effective "magnetic resistance" $\rho^{\ast}$ on the magnetic field $B$ in a range of $B=0,3\div 22$ kG and on the photomagnetic currents $i_{\text{PM}}$ at $B\leq 15$ kG were measured at SOK. The patterns of admixture bipolarity in the presence of a compensating disorder in the samples are discussed. It is established that the relations $R(B)$ and $\rho^{\ast} (B)$ may serve as indicators of the heterogeneity of this type.