Investigations are performed of the dark and photo-Hall parameters, the optical absorption, and the photoconductivity of gallium arsenide samples doped with oxygen with varying filling of the deep donor (D) level with O electrons. It is explained that in a temperature range of 10-300 K in maximally high resistance GaAs with $\rho=2{\cdot}10^{9}$ $\Omega\cdot$cm there are no noticeable rechargings of the D-level with O, while at 10-50 K neutral scattering dominates in such material. A conclusion is drawn about the concentration and nature of the D-centers. The energy of ionization of the D-level of oxygen is $\varepsilon_{\text{D$\nu$}}\approx$0.76 eV and is not changed with temperature in the range of 10-300 K.
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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