The (100) facet of silicon is investigated using methods of diffraction of slow electrons and electron Auger spectroscopy. (2 by 1), p(2 by 2), and c(4 by 4) superstructures are noted as the surface admixtures are removed from the sample. The c(4 by 4) superstructure is shifted into a(4 by 1) superstructure with subsequent electron effects ($T=450^{\circ} С$, E = 3 keV, and $D = 5\cdot 10^{19}$ electrons/cm$^2$). A model of the mutual transition of the cited elementary cells with each other is constructed using a quantum-chemical approximation of valent bonds.
Department of Electronics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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