It is established in experiments in a-Si:H films implanted with boron and phosphorus ions that with total concentration of the implaned B and P ions $N_B$ and $N_Р$ of less than $5\cdot 10^{19}$ cm$^{-3}$ the Staebler-Wronski effect, a change in the dark conductivity and its energy of activation after illumination of the films by white light, is observed. At $N_P, N_B>5\cdot 10^{19}$ cm$^{-3}$ there is no such effect. The nature of the observed patterns is discussed.
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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