Annotation
An expression is obtained for the spatial distribution of nonequilibrium carriers in a graded-gap semiconductor excited by a focused electron probe. Comparison between calculated and experimental spectra is used to estimate the diffusion length and the reduced surface recombination rate.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
V.I. Petrov, E.E. Skvortsova, A.V. Shabalin
Department of Electronics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Department of Electronics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Science News of the Faculty of Physics, Lomonosov Moscow State University
This new information publication, which is intended to convey to the staff, students and graduate students, faculty colleagues and partners of the main achievements of scientists and scientific information on the events in the life of university physicists.