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Avalanche "edge" injection of electrons in silicon MOS structures

S.N. Kozlov, A.N. Nevzorov, A.Yu. Potapov

Moscow University Physics Bulletin 1988. 43. N 1. P. 67

  • Article
Annotation

The effect of nonuniform avalanche injection of electrons from Si into $SiO_2$ on the threshold avalanche voltage, the generation of surface states, and surface generation has been investigated.

Authors
S.N. Kozlov, A.N. Nevzorov, A.Yu. Potapov
Department of General Physics for the Chemistry Faculty, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 1, 1988

Moscow University Physics Bulletin

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