Annotation
A nonintrusive method is proposed for the determination of the surface resistance and mean free time of carriers in a thin layer of a doped semiconductor deposited on a high-resistance substrate whose thickness is insufficient for the observation of the plasma minimum. The method is based on measurement of the infrared transmission of silicon wafers in the wavelength range 20-130 μm.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
O.G. Koshelev, Т.B. Pleskacheva
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Department of of Scientific Information of Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Department of of Scientific Information of Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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