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Emission-electronics methods in diagnosing high-temperature transition-metal characteristics

L.Yu. Goloskokova, B.B. Shishkin

Moscow University Physics Bulletin 1988. 43. N 2. P. 64

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Annotation

A temperature dependence is demonstrated for S, the point-defect thermal entropy of formation, and a method is proposed for determining S(T) by measuring the voltage-current characteristics for recombination-emission currents.

Rissian citation:
Л.Ю. Голоскокова, Б.Б. Шишкин.
Развитие методов эмиссионной электроники для диагностики высокотемпературных характеристик переходных металлов.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 1988. № 2. С. 63.
Authors
L.Yu. Goloskokova, B.B. Shishkin
Department of Electronics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 2, 1988

Moscow University Physics Bulletin

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