Annotation
A temperature dependence is demonstrated for S, the point-defect thermal entropy of formation, and a method is proposed for determining S(T) by measuring the voltage-current characteristics for recombination-emission currents.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
L.Yu. Goloskokova, B.B. Shishkin
Department of Electronics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Department of Electronics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia