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Defect formation in GaAs and GaAsP under the influence of the excimer laser radiation

А.I. Efimova, Р.К. Kashkarov, М.S. Dzhidzhoev, and V.К. Popov

Moscow University Physics Bulletin 1988. 1988. N 6. P. 82

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Annotation

The effect of excimer-laser pulses on the photoluminescent properties of GaAs and GaAsP was investigated. It was shown that, depending on the initial defects present in the samples, the laser pulses give rise to the generation of annihilation of radiationless recombination centers.

Rissian citation:
А.И. Ефимова, П.К. Кашкаров, М.С. Джиджоев, В.К. Попов.
Дефектообразование в GaAs и GaAsP при воздействии излучения эксимерного лазера.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 1988. № 6. С. 73.
Authors
А.I. Efimova, Р.К. Kashkarov, М.S. Dzhidzhoev, and V.К. Popov
Chair of General Physics for the Chemistry Department
Issue 6, 1988

Moscow University Physics Bulletin

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