Annotation
The effect of excimer-laser pulses on the photoluminescent properties of GaAs and GaAsP was investigated. It was shown that, depending on the initial defects present in the samples, the laser pulses give rise to the generation of annihilation of radiationless recombination centers.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
А.I. Efimova, Р.К. Kashkarov, М.S. Dzhidzhoev, and V.К. Popov
Chair of General Physics for the Chemistry Department
Chair of General Physics for the Chemistry Department