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Galvanomagnetic effects in germanium- doped indium antimonide under deep irradiation with fast electrons

N.В. Brandt, Е.Р. Skipetrov, V.V. Dmitriev, G.I. Kol'tsov, and Е.А. Ladygin

Moscow University Physics Bulletin 1988. 1988. N 6. P. 113

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Annotation

It is shown that p-n conversion under electron bombardment of $р-InSb\langle Ge\rangle$ samples, the electron concentration passes through а maximum, and а limiting state with n- type conductivity is reached. These re sults are explained in terms of the formation of complexes consisting of primary defects and impurity atoms.

Rissian citation:
Н.Б. Брандт, Е.П. Скипетров, В.В. Дмитриев, Г.И. Кольцов, Е.А. Ладыгин.
Гальваномагнитные эффекты в антимониде индия, легированном германием, при глубоком облучении быстрыми электронами.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 1988. № 6. С. 95.
Authors
N.В. Brandt, Е.Р. Skipetrov, V.V. Dmitriev, G.I. Kol'tsov, and Е.А. Ladygin
Chair of Low Temperature Physics
Issue 6, 1988

Moscow University Physics Bulletin

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