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Galvanomagnetic effects in germanium- doped indium antimonide under deep irradiation with fast electrons

N.В. Brandt, Е.Р. Skipetrov, V.V. Dmitriev, G.I. Kol'tsov, and Е.А. Ladygin

Moscow University Physics Bulletin 1988. 1988. N 6. P. 113

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Annotation

It is shown that p-n conversion under electron bombardment of $р-InSb\langle Ge\rangle$ samples, the electron concentration passes through а maximum, and а limiting state with n- type conductivity is reached. These re sults are explained in terms of the formation of complexes consisting of primary defects and impurity atoms.

Authors
N.В. Brandt, Е.Р. Skipetrov, V.V. Dmitriev, G.I. Kol'tsov, and Е.А. Ladygin
Chair of Low Temperature Physics
Issue 6, 1988

Moscow University Physics Bulletin

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