Faculty of Physics
M.V.Lomonosov Moscow State University
Menu
Regular Article

# Influence of electron injection from Si into $SiO_2$ on the electrical instability of metal- dielectric - semiconductor structures

## Yu.N. Kasumov and S.N. Kozlov

### Moscow University Physics Bulletin 1989. 1989. N 4. P. 88

• Article
Annotation

The laws of electrical instability of silicon metal-dielectric-semiconductor structures are studied as а function of the quantity of electrons injected from silicon into the $SiO_2$ layer and the temperature. It is shown that the electrical stability of inj ection-degraded structures is determined bу the superposition of two effects: the appearance of an additional mobile ionic charge and the generation and recharging of "slow" electron states.

Rissian citation:
Ю.Н. Касумов, С.Н. Козлов.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 1989. № 4. С. 73.
Authors
Yu.N. Kasumov and S.N. Kozlov
Department of General Physics for the Chemistry Faculty

### Science News of the Faculty of Physics, Lomonosov Moscow State University

This new information publication, which is intended to convey to the staff, students and graduate students, faculty colleagues and partners of the main achievements of scientists and scientific information on the events in the life of university physicists.