Spatial resolution of images in semiconductor structure investigation using a scanning electron microscope in the local cathodoluminescence mode

Analysis of spatial resolution in a scanning electron microscopy study of semiconductors in the local cathodoluminescence mode has been made on the basis of electron trajectory simulation by the Monte Carlo method. A high spatial resolution is shown to be attainable at accelerating voltages of 10 to 20 kV. The experimental results obtained during the cathodoluminescence study of n-GaP are in agreement with the computed values of spatial resolution.