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The effect of cross-modulation on free carriers in semiconductors for laser diagnostics of high-power SHF radiations

A.V. Kozar', S.A. Krupenko

Moscow University Physics Bulletin 1990. 45. N 3. P. 36

  • Article
Annotation

Simultaneous action of the continuous SHF and IR radiations affects the reflection coefficients of crystalline silicon due to alterations of both the temperature of the sample and the mobility and concentration of free charge carriers. Some theoretical and experimental results, as well as prospects for applying the effect in scientific studies, are considered.

Authors
A.V. Kozar', S.A. Krupenko
Department of Micromave Radiophysics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 3, 1990

Moscow University Physics Bulletin

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