Annotation
The electron hopping relaxation in disordered organic semiconductors was analyzed within the framework of the diagonal-disorder model. The time variation of the electron concentration at the percolation level was found for different relaxation stages, the conditions for passing from dispersive to normal (Gaussian) transport were studied, and the dependence of the dispersion parameter on the temperature and the disorder degree was determined.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
I.P. Zvyagin, A.V. Plyukhin
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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