Illumination-induced variations of dark conductivity in amorphous hydrogenated silicon films ($\alpha$-Si:Н) doped with boron at different concentrations were investigated. Measurements were carried out in the 270 to 470 K temperature range. Three processes leading to conductivity variation were revealed. Two of them cause an increase in conductivity and are related to the film surface. The third process occurs in the bulk. The possible mechanisms of these processes are considered.
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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