Study of the dependence of the transition energy $E_1+\Delta_1$, on the $Hg_{1-x}Mn_xTe$ composition by the electrorefiectance method

Electroreflectance spectra of $Hg_{1-x}Mn_xTe$ solid solutions were used to determine the coefficients of a polynomial that expresses the dependence of the transition energy $E_1+\Delta_1$ on the concentration parameter $x$. The possibility of local topographic investigations of the composition heterogeneity on the semiconductor surface is demonstrated.