Defect production has been studied in gallium phosphide crystals irradiated by ruby laser pulses corresponding to the region of transparency for interband transitions. It has been shown that the defect production efficiency increases with an increase in the original defect density in the near-surface area resulting from the peculiarities of physical and chemical treatment of specimens. The process of defect rearrangement has been found to be athermal. The concentration of laser-induced centers of photoluminescence quenching depends nonlinearly on the laser pulse energy.
Department of General Physics and Molecular Electronics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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