The influence of the polarization state of а ferroelectric on 1the voltage-capacitance and voltage-current characteristics of metal-ferro.electric film-silicon structures has been studied. The thermofield processing has b 1een demonstrated to cause not only the repolarization of the ferroelectric but a1so the recharging of electron traps. The mass spectroscopy method was used to record the desorption of various atoms and molecules from the surface of the structure on heating above the phase transition temperature.
Department of General Physics and Molecular Electronics
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