The transport and optical properties of $p$- and $n$-type lnAs/GaAs multilayer structures with quantum dots have been studied depending on the amount of deposited InAs. Indium arsenide quantum dots in GaAs have been found to form two-dimensional electronic or hole layers generating Shubnikov-de Haas oscillations. The experimental temperature dependences of resistance in the $[110]$ and $[\bar{1}10]$ directions (the temperature range of 1.6-300 K) have shown the resistance to be anisotropic. Experiment evidences that electric current carriers become localized as temperature decreases. According to the photoluminescence spectral data, light emitted in the plane of the structure is polarized.
Department of Low-Temperature and Superconductivity Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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