An analytic expression for the effective series resistance of an $(n^+$-$p)$Si solar cell with an antireflection coating made of an optically transparent conducting oxide such as indium-tin oxide (ITO) is derived. The obtained expression is the resistance dependence on the solar cell parameters, namely, the ITO film and the $n^+$-layer resistances, the contact resistance between the $n^+$-layer and ITO, the width of metallic bands in the current-collecting grid, and on the interband distance.
Research Institute of Nuclear Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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