Annotation
The influence of polar Langmuir-Blodgett films on the recharge of slow silicon surface states in a vacuum and in atmospheric water vapor has been studied. The deposition of a copolymer film has been shown to decrease silicon surface heterogeneity. The forms of kinetic dependence of the recharge of slow states have been analyzed. The results obtained are interpreted in terms of the electron-vibrational model of slow charge relaxation on the semiconductor surface.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
N.L. Levshin$^1$, S.G. Yudin$^2$
$^1$Department of General Physics and Molecular Electronics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
$^2$Shubnikov Institute of Crystallography, Russian Academy of Sciences
$^1$Department of General Physics and Molecular Electronics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
$^2$Shubnikov Institute of Crystallography, Russian Academy of Sciences
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