Regular Article

Concentration of EL2 centers in GaAs single crystals grown from melts of various compositions

V.A. Morozova$^1$, O.G. Koshelev$^1$, E.P. Veretenkin$^2$, V.N. Gavrin$^2$, Yu.P. Kozlova$^2$, A.V. Markov$^3$, A.Ya. Polyakov$^3$

Moscow University Physics Bulletin 2001. 56. N 3. P. 81

Article

Annotation

The concentration of EL2 centers in unalloyed high-resistance GaAs grown from a melt enriched in Ga was shown to reduce by 50 percent as the atomic fraction of arsenic decreased from 0.5 to 0.454. Thermal annealing increased the concentration of centers 1.6 times.

Authors

V.A. Morozova$^1$, O.G. Koshelev$^1$, E.P. Veretenkin$^2$, V.N. Gavrin$^2$, Yu.P. Kozlova$^2$, A.V. Markov$^3$, A.Ya. Polyakov$^3$
$^1$Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
$^2$Institute for Nuclear Research, Russian Academy of Sciences, Moscow
$^3$Institute of Chemical Problems of Microelectronics, Moscow

Issue 3, 2001

Moscow University Physics Bulletin

Science News of the Faculty of Physics, Lomonosov Moscow State University

This new information publication, which is intended to convey to the staff, students and graduate students, faculty colleagues and partners of the main achievements of scientists and scientific information on the events in the life of university physicists.