The electrophysical properties and the structure of copper stearate films deposited on the semiconductor (germanium and silicon) surface by the Langmuir—Blodgett method have been studied. The Langmuir—Blodgett films have been demonstrated to have electron trapping sites, which recharge under photoiiyection of charge carriers from the bulk of semiconductors. It is found that the recharging of these centers results in the ordering of the structure of deposited copper stearate layers.
Department of General Physics and Molecular Electronics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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