Annotation
The thermal relaxation kinetics of light-induced metastable defects in a-Si:H was studied prior to and after partial relaxation in the dark and in a dim light. The film lighting was found to change the relaxation rate of the defects and their distribution in relaxation time. This was demonstrated to be due to the concurrent light-induced relaxation and formation of the defects.
PACS:
61.43.Dq Amorphous semiconductors, metals, and alloys
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
71.55.Jv Disordered structures; amorphous and glassy solids
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
71.55.Jv Disordered structures; amorphous and glassy solids
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
I.A. Kurova, N.N. Ormont
Department of Semiconductor Physics, Moscow State University, Moscow, 119991, Russia
Department of Semiconductor Physics, Moscow State University, Moscow, 119991, Russia
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