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Impurity photovoltaic effect in p-i-n structures of undoped GaAs

V.A. Morozova$^1$, O.G. Koshelev$^1$, E.P. Veretenkin$^1$, V.N. Gavrin$^2$, Yu.P. Kozlova$^2$

Moscow University Physics Bulletin 2009. 64. N 2. P. 177

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Annotation

Photo-emf in the range hv = 0.76 − 1.35 eV was found in p-i-n structures produced from undoped GaAs crystals with known parameters; the current sensitivities in the impurity and intrinsic (hv > 1.35 eV) regions were comparable. It was proven that the impurity photovoltaic effect results from EL2 and EL3 structural defects creating deep donor levels in the forbidden zone. Calculations were performed that justified the possibility of observing this effect on the investigated structures.

PACS:
71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
Rissian citation:
В.А. Морозова, О.Г. Кошелев, Е.П. Веретенкин, В.Н. Гаврин, Ю.П. Козлова.
Примесный фотовольтаический эффект на p-i-n-структурах на основе нелегированного GaAs.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 2009. № 2. С. 69.
Authors
V.A. Morozova$^1$, O.G. Koshelev$^1$, E.P. Veretenkin$^1$, V.N. Gavrin$^2$, Yu.P. Kozlova$^2$
$^1$Faculty of Physics, Moscow State University, Moscow, 119991, Russia
$^2$Institute for Nuclear Research, Russian Academy of Sciences, Moscow, Russia
Issue 2, 2009

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