It is established that both the amplitude and temperature dependence of dark conductivity and photoconductivity of preilluminated high-sensitivity layered films of amorphous hydrogenated silicon (a-Si:H) prepared by cyclic deposition with layer-by-layer annealing in hydrogen plasma depend on illumination temperature. The relaxation kinetics of the dark conductivity of these films after illumination is shut off is found to be nonmonotonic. The observed effects can be explained by fast and slow changes in the distribution of energy state density below the midgap during and after illumination.
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
71.55.Jv Disordered structures; amorphous and glassy solids
Faculty of Physics, Moscow State University, Moscow, 119992, Russia
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