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Plasma cleaning of multilayer mirrors in EUV lithography from amorphous carbon contaminations

E.M. Malykhin, D.V. Lopaev, A.T. Rakhimov, T.V. Rakhimova, O.V. Braginskii, A.S. Kovalev, A.N. Vasil’eva, S.M. Zyryanov

Moscow University Physics Bulletin 2011. 66. N 2. P. 184

  • Article
Annotation

The feasibility of plasma cleaning of the multilayer mirrors used in 13.5-nm EUV lithography from carbon contaminations is studied. Experiments conducted in electrodeless plasma of the surface-wave low-pressure discharge in helium and hydrogen demonstrated the high rate, efficiency, and selectivity of this cleaning without any damage of the mirror’s upper protection layer, even at the atomic level. The optimal working parameters of plasma cleaning are determined and its possible mechanism is discussed.

Received: 2010 October 31
Approved: 2011 December 14
PACS:
81.65.Cf Surface cleaning, etching, patterning
61.48.+c Fullerenes and fullerene-related materials
39.30.+w Spectroscopic techniques
82.20.-w Chemical kinetics and dynamics
Authors
E.M. Malykhin, D.V. Lopaev, A.T. Rakhimov, T.V. Rakhimova, O.V. Braginskii, A.S. Kovalev, A.N. Vasil’eva, S.M. Zyryanov
Skobel’tsyn Institute of Nuclear Physics, Moscow State University, Moscow, 119992, Russia
Issue 2, 2011

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