Experimental results on the visualization of the density of states in InAs/GaSa(001) quantum dots that were obtained by tunnel atomic-force microscopy in an ultrahigh vacuum are presented. A one-dimensional (1D) model of dissipative quantum tunneling is proposed for describing experimental current-voltage characteristics of a tunnel contact between an atomic force microscope probe and the surface of InAs/GaAs (001) quantum dots. It was found that the influence of two local modes of the wide-band matrix on the probability of 1D dissipative tunneling leads to the appearance of several randomly spaced peaks in the field dependence. It was shown that the theoretical dependence agrees qualitatively with experimental the current-voltage characteristic of the atomic force microscope tip and the surface of InAs/GaAs(001) quantum dots.
03.65.Sq Semiclassical theories and applications
31.15.Gy Semiclassical methods
31.15.Kb Path-integral methods
$^1$Department of Physics, Moscow State University, Moscow, 119991, Russia
$^2$Department of Physics, Penza State University, Penza, 440026, Russia
$^3$Lobachevsky University of Nizhni Novgorod, Nizhni Novgorod, 603950, Russia
$^4$Zavoisky Institute for Physics and Technology, Kazan Scientific Center, Russian Academy of Sciences, Kazan, 420029, Russia
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