Annotation
Supercomputer modeling of the process of high-energy deposition (ion-beam sputtering) of thin films of silicon dioxide using the molecular dynamics (MD) approach was carried out. The deposition method based on the facilities of the LAMMPS MD program was compared with another method that is known from the literature. An analysis of the structure of the deposited film (density, radial distribution function, concentration of defects) was carried out.
Received: 2015 July 16
Approved: 2016 March 11
PACS:
60.00.00 CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
A. V. Gorokh, F.V. Grigoriev, E. V. Katkova, A. V. Sulimov, S. A. Sharapova
Research Computing Center, Moscow State University, Moscow, 119991 Russia
Research Computing Center, Moscow State University, Moscow, 119991 Russia
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