Here we present the results of the experimental study of the electron transport through the individual phosphorus dopants implanted into the silicon crystal. We developed the original technique for the single-electron transistor fabrication from silicon-on-insulator material with an island formed by single phosphorus atoms. The proposed method is based on well known CMOS compatible technological processes which are standard in semiconductor electronics and may be used in the most research groups. The large Coulomb blockade energy value of the investigated single-electron transistor ($n\approx 20$ meV) allows one to register single-electron effects in wide temperature range up to 77 K. We measured and analyzed stability diagrams of fabricated experimental structures. We demonstrated the single-electron transistor with controllable electron transport through 2 – 3 phosphorus dopants only.
$^1$Laboratory of Cryoelectronics, Faculty of Physics, M.V.Lomonosov Moscow State University.
$^2$Skobeltsyn Institute of Nuclear Physics, M.V.Lomonosov Moscow State University.