In this work the layers of silicon nanowires produced on highly-doped silicon wafers were studied by means of Raman spectroscopy and IR reflection. The IR reflection data and effective medium approximation approach allowed us estimate the porosity of layers. Analyzing Raman scattering spectra we make a conclusion that the free carriers concentration in silicon nanowires reduces in comparison to wafer concentration. According to the data obtained we deduce, that 2 μm thick layer of silicon nanowires is optimal as antireflection layer for solar cells. The layers of 15 and 20 μm thickness were studied as well. It was demonstrated that there is no effect of Raman scattering enhancement in these layers.
78.20.-e Optical properties of bulk materials and thin films
$^1$Department of General Nuclear Physics, Faculty of physics, Lomonosov Moscow State University\
$^2$NRC «Kurchatov Institute», 1, Akademika Kurchatova pl., Moscow, 123182, Russia.
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